Abstract
In this paper, a simple closed-form model identifying the electrical behavior of a taper through silicon via (TSV) is reported. The model is based on the Transmission Line Method (TLM) and 3D electromagnetic simulations. The usefulness of the modeling approach is validated through measurements on some test structures over a wide range of frequencies from DC to 10 GHz. The substrate coupling and MOS effects are included in the electrical description of the 3D system as they are no longer negligible at high-frequency range operation. The efficient 3D-TLE (Transmission Line Extractor) by INL (Institute of Nanotechnology of Lyon) tool is used to extract the impedance of contacts and TSVs. Moreover, as an application of this extractor, a 26GHz/2 GHz bandwidth TSV based RF filter is proposed and designed.
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