Abstract
Current density-voltage (J-V) characteristics at 77 K of InSb pin photodiodes, in dark condition and under illumination, were simulated in view to design an avalanche photodiode (APD). Theoretical J-V results were compared with experimental results, performed on InSb diode fabricated by molecular beam epitaxy, in order to validate the parameter values used for the modeling. Then, with the assumption of multiplication induced by the electrons, an optimized separate absorption and multiplication APD structure was defined by theoretically studying the absorber doping level and the multiplication layer thickness. Calculated gain value higher than 10 was achieved at V = −4.5 V. This result shows the potentiality of InSb material as APD device.
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