Low dark current and stable ultraviolet avalanche photodiode of organic (PEDOT:PSS)‐inorganic (ZnSSe) hybrid junction structure

Abstract

AbstractWe have developed organic‐inorganic hybrid avalanche photodiode (APD) with conducting polymer as a window layer on ZnSSe/n‐GaAs wafers. APD wafers used in this study were grown by molecular beam epitaxy (MBE). We used PEDOT:PSS as hole‐transport conducting polymer window layers formed by inkjet method. We have succeeded in fabrication of low dark current and stable ultraviolet hybrid APDs. The present device has exhibited very low voltage APD operation at 29 V and extremely low dark current of 10–11 A/mm2 in the avalanche breakdown region. The APD device also has shown maximum multiplication factor of 45 and high sensitivity ∼ 3 A/W at the ultraviolet region (∼ 300 nm). A stable device operation is established using polyimide passivation and sealed into package with N2 atmosphere. We also demonstrated integrated devices operation in PIN mode. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)