Abstract
The effects of impact ionisation in the InGaAs absorption layer of telecommunication wavelength avalanche photodiodes (APDs) on multiplication, breakdown voltage and excess noise are investigated. APD structures with a multiplication layer of either InP or InAlAs were studied. A wide range of multiplication layer thickness and absorption layer thickness were covered. The results showed that impact ionisation in the InGaAs absorber has a detrimental effect on the performance of InP/InGaAs APDs compared to that of InAlAs/InGaAs APDs. This effect is independent of the avalanche multiplication layer thickness but increases with absorption layer thickness.
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