Abstract
Mn3O4 thin films were grown on Nb-doped (0 0 1) SrTiO3 (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/Mn3O4/NSTO heterostructures. Pt/Mn3O4/NSTO devices exhibit bipolar resistive switching (RS) effect with maximum switching ratio of 104 and good endurance. When the resistance states of these devices are switched between the low resistance state (LRS) and the high resistance state (HRS), the saturation magnetization, remanent magnetization and coercive field of the Mn3O4 thin films can be modulated simultaneously. The electrical control of magnetism via resistive switching can be attributed to the process of charge trapping/detrapping and oxygen ion migration that leads to changes in the super-exchange interactions between Mn ions at the octahedral and tetrahedral positions. Our work provides a new avenue for exploration of the Mn3O4 resistive switching materials and is significant for understanding the mechanism of the RS effect and multifunctional devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
