Abstract
In this work, the electrical properties of carbon nanotubes were deposited on silicon substrate at different temperatures studied. CNTs were deposited on silicon at temperature 700 to 850 0C by using double-furnace thermal chemical vapor deposition technique. Carbon nanotubes with diameters of 20 to 30 nm were successfully synthesized on a silicon substrate. In this system, carbon nanotubes were grown directly on the p-type silicon. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Based on micro-Raman spectroscopy result, the peak carbon nanotube (around 1 300 to 1 600 nm) was detected. Good electrical contact produced when Au sputter on CNTs characterized by I-V probe. Samples CNTs produced at 850 OC possess good conducting compare to other.
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