Abstract
In this paper, carbon nanotubes on porous silicon substrate were developed in order to get high quality nanotubes for various kind of application. CNTs were deposited on porous silicon nanostructures (PSiN) at 750 0C on porous silicon by using double-furnace thermal chemical vapor deposition technique. Align carbon nanotubes with diameters of 15 to 30 nm were successfully synthesized on a porous silicon substrate. In this system, carbon nanotubes were grown directly on the p-type porous silicon surface at 750 0C for a total time of 30 minutes. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Align carbon nanotubes (ACNTs) bundle with uniform diameter (~20 nm) were found grown on porous silicon at certain area. Based on micro-Raman spectroscopy result, the peak of silicon at ~520 nm and peak of carbon nanotube (around 1 300 to 1 600 nm) was detected.
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