Abstract
The static electrical conductivity of a thin conducting film is calculated using the kinetic approach. The model of diffuse boundary conditions is used as boundary conditions for the charge carrier distribution function. The isoenergetic surface of the conducting film material is an ellipsoid of rotation that is arbitrarily oriented in the pulse space. The volume of the conductor is dominated by scattering on impurity atoms and on dislocations of electrons (holes). The electrical conductivity of the film is analyzed depending on the angles that determine the direction of the ellipsoid axis of rotation, and a comparison with the results for the case of a macroscopic sample is presented. A comparison is made with experimental data for the electrical conductivity of Bi and Si thin films.
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