Characteristics of ZnXCo3-XO4 Spinel Thin Films

Abstract

Extended Abstract Recently there have been many researches to develop new materials for active transparent electronic devices. Transparent p-n junction diodes for “invisible optoelectronic devices” have a wide range of applications such as smart window and organic lighting diodes. Although both of the n-type and p-type transparent conductive oxides (TCOs) are essential for transparent p-n junction diodes, the application of a transparent p-n junction is far from practical use due to the poor electrical conductivity and the optical transmittance of p-type materials. In this study p-type transparent semiconducting oxide films of ZnxCo3-xO4 thin films were deposited on glass and csapphire single crystal (000l) substrates by Pulsed Laser Deposition process. The effects of Zn the type of the substrate, substrate temperature and atmosphere on the structural, electrical and optical properties of the (Zn,Co)3O4 spinel oxide thin films were examined. The preferred orientation of spinel thin films frequently observed in other spinel thin films such as of NiOCo2O4, was not observed in these films. The electrical conductivity of the ZnxCo3-xO4 thin films increased with the increasing Zndoping concentration. The electrical conductivity of the thin films on glass and sapphire substrates was improved by the introduction of oxygen and increased with increasing substrate temperature. The optical transmittance decreased with the introduction of oxygen gas and increased with increasing substrate temperature.