Abstract
Schottky metal-polymer diodes, fabricated with a light-emitting polyvinylene polymer, have been studied for their electrical conduction characteristics. Radiative recombination localized at electron injection sites is seen. Device degradation at high drive voltages was observed, together with a self-passivation mechanism due to the formation of metal compounds at the periphery of electrical contacts. Reverse conduction characteristic and Schottky barrier height indicate a diffuse and extended depletion region in these devices.
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