Abstract
Metal contacts to InAs are especially interesting because the surface Fermi level is not stabilized within the forbidden band but is located above the conduction band minimum. The surface of InAs has been investigated by means of electron tunneling experiments which are uniquely sensitive to the surface barrier of p-InAs. The following experimental observations are discussed: the appearance of Esaki-type negative resistance in the forward characteristics of metal/p-InAs contacts; the influence of the metal on this behavior; and the effects of argon ion bombardment and surface preparation on the electrical characteristics. The conclusions are the existence of both a fully inverted surface and an intrinsic interfacial barrier, for both etched and vacuum cleaved surfaces. An estimate of the interfacial barrier properties is presented.
Published Version
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