Abstract
An overview is given on measurement techniques and results obtained for the characterization of bonded Si‐Si,, and interfaces. The electrical properties of Si‐Si interfaces are similar to those of grain boundaries, which suggests a model where the current across the interface is limited by a potential barrier determined by charge carriers captured into electron states at the bonded interface. From current‐voltage and capacitance‐voltage measurements, the interface charge and its energy distribution can be determined. For bonded interfaces, energy distributions of interface states are obtained by capacitance‐voltage technique with midgap densities in the region at or above. Interfaces between two bonded layers exhibit charge trapping phenomena.
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