Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Abstract

We successfully fabricated high quality cubic AlN/GaN heterostructures on 3C-SiC substrates by radio-frequency plasma assisted molecular beam epitaxy, and characterized their electrical properties for the first time. The Hall mobility value of 1290 cm2/Vs was obtained at room temperature, and it drastically increased to 7330 cm2/Vs at 100 K. These values as well as other electrical characterization results suggest the generation of a two-dimensional electron gas.