Abstract
The electrical characteristics of single Si-fin n-type fin field-effect transistors at the threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) implantation energy 6 and 10 keV in the experimental work were practically extracted and analyzed. In general, the electrical performance of the tested devices at the lower implantation energy shows a better performance than the other group such as in drive current, subthreshold swing, punchthrough voltage, and drain-induced barrier lowering, especially as the feature size of these devices gets smaller up to 17 nm of channel width. However, the channel mobility in transconductance view at the higher implantation energy is better due to the smaller channel scattering.
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