Effects of Channel Dimension and Doping Concentration of Source and Drain Contacts on GNRFET Performance

Abstract

Growth of the electronic industry has been accompanied by the increasing number of components on a chip. Consequently, it is necessary to shrink device dimension. In this paper, effects of channel dimension reducing of the graphene nanoribbon field effect transistors (GNRFET) on performance of the GNRFET are studied. Also, effects of increasing in source/drain contacts doping concentration of the GNRFET are discussed. In order to device simulation, non-equilibrium Green’s function (NEGF) equation is applied for self-consistent solving of Poisson and Schrodinger equations with the tight binding approximation in the mode space and ballistic regime. According to the simulation results, channel length reduction of the GNRFET causes higher values in ON-state and OFF-state currents, transconductance (gm), subthreshold swing and drain induced barrier lowering (DIBL). Also, it causes lower values in threshold voltage and ION/IOFF ratio. Decreasing in channel width of the GNRFET, causes lower values in ON-state and OFF-state currents, DIBL, subthreshold swing and gm. Also, it causes higher values in ION/IOFF ratio and threshold voltage. Increasing in source/drain contacts doping concentration of the GNRFET causes increasing in ON-state and OFF-state currents, DIBL, subthreshold swing and gm. Also, it causes decreasing in ION/IOFF ratio and threshold voltage. The effects of channel dimension reducing and contacts doping concentration on the transistor performance should be considered for optimal design, fabrication and selection of GNRFETs in various circuits and applications.