Abstract
We have fabricated p +- n and Schottky diodes with contacts made of laser-formed palladium-silicide. The electrical characteristics of these diodes are presented. The reverse currents and breakdown voltages are comparable to conventionally contacted p +- n diodes. The barrier height of laser-formed Schottky diodes agrees well with published values for Pd 2Si. The promising results point out the potential applications of contact formation by laser irradiation in device manufacture.
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