Abstract
The effect of He-Ne (632.8 nm) and diode (650 nm) lasers on the electrical characteristics of silicon diode have been studied. The electrical characteristics of the diode were recorded before laser irradiations, then the diode is subjected to He-Ne laser for 5 and 10 minutes and then the diode electrical characteristics were recorded for each time of exposure and the same was done in the case of irradiation with diode laser. The electrical characteristics of the diode before and after laser irradiations were compared and thermal effect was noticed when compared the effect of lasers irradiation and the well known temperature effect on the electrical characteristics of the diode. It was found that the effect of the He-Ne (632.8 nm) and diode laser (650 nm) on the electrical characteristics of silicon diode at exposure time of 5 minutes were comparable but for 10 minutes of exposure the effect of He-Ne laser irradiation on the characteristics was different from that of diode laser and this is due to the fact that the two lasers has different properties.
Highlights
The word laser is an acronym of the words: Light Amplification by Stimulated Emission of Radiation [1]
In this work we studied the effect of laser irradiations on the electrical characteristics of silicon diode
The silicon diode was subjected to He-Ne (632.8 nm) laser radiation for five minutes and its electrical characteristics were recorded again, the obtained electrical characteristics of the silicon diode after Five minutes of He-Ne laser exposure were plotted in figure 3
Summary
The word laser is an acronym of the words: Light Amplification by Stimulated Emission of Radiation [1]. It is used to describe the device that produce that light with that unusual properties or to describe the light itself, and in some manner to describe the process of producing that light (lasing). The applications of lasers depend on the unusual properties of laser light, ones that are different from the properties of light from conventional sources [2]. A p-n junction diode can be fabricated by doping the semiconductor material with opposite doping impurities (i.e., acceptor or donor impurities) to form the p and n regions of the diode. The basic device theory used in predicting the current– voltage (I–V) characteristics in a p-n junction diode was first developed by Shockley [3]. Shockley diode equation is given by: qV
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