Abstract
The parasitic capaciences of film resistors can dramatically affect the output parameters of a microelectronic unit. A technique for computation of these capacitances is necessary for construction of mathematical models for CAD which are to be employed at the stage of circuit simulation, this stipulating the actuality of developing the technique for computations of the capacitances. The article presents analytic expressions for the capacitance of a current-carrying rectangular high-resistance film conductor (resistor), i. e., resistor stripe. The expressions describe the dependence of the capacitance on a non-uniformity of the charge distribution along the vector of the current density. The bounds within which the resistor’s capacitance changes with the ultimate change of the load resistance from 0 to ¥ are found. The estimation of the error caused by a computation of a resistor’s capacitance using formulae intended for a computation of a conductor capacitance is presented. A substantial nonlinearity of the input impedance of the film resistor is revealed. The nonlinearity is caused by a charge redistribution which takes place if the film resistor’s load resistance changes during the functioning of the integrated circuit.
Highlights
Паразитные емкости пленочных резисторов могут существенно влиять на выходные электрические характеристики проектируемого изделия микроэлектроники
The expressions describe the dependence of the capacitance on a nonuniformity of the charge distribution along the vector of the current density
The nonlinearity is caused by a charge redistribution which takes place if the film resistor’s load resistance changes during the functioning of the integrated circuit
Summary
Паразитные емкости пленочных резисторов могут существенно влиять на выходные электрические характеристики проектируемого изделия микроэлектроники. Разыскав первообразную тройного интеграла в знаменателе последней формулы при равномерной плотности распределения заряда η(x0), получим, что аналитическое выражение для полной собственной емкости проводника или низкоомного прямоугольного тонкопленочного резистора сопротивлением R
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