Abstract
In the present study, we have investigated the effects of illumination intensity on the optical and electrical characteristics of the Al/CdFe2O4/p-Si/Al photodiode. A thin film of CdFe2O4 was fabricated using the sol-gel spin coating method that allows good thickness control and low-cost manufacturing as compared to alternative techniques. The current-voltage (I-V) of the Al/CdFe2O4/p-Si/Al photodiode was measured in the dark and under different illumination intensities. The photocurrent increased with higher luminous intensity and its sensitivity has a strong dependence on the reverse bias rising from 1.08⁎10-7 A under dark conditions to 6.11⁎10-4 A at 100 mW/cm2 of illumination. The parameters of the photodiode such as ideality factor and barrier height were calculated using the thermionic emission model. The ideality factor of the Al/CdFe2O4/p-Si/Al photodiode was found to be 4.4. The barrier height was found to be 0.88 eV. The capacitance-voltage (C-V) characteristics measured at different frequencies have strongly varied with frequency, decreasing with frequency. Consequently, the resulting interface density (Dit) value of the Al/CdFe2O4/p-Si/Al photodiode also decreased with higher frequency. Similarly, the fitted series resistance of the Al/CdFe2O4/p-Si/Al photodiode has declined with higher frequency.
Highlights
In recent years, researchers have gone to significant lengths to prepare and utilize novel semiconductor metal oxides in new device configurations
The CdO-based films constitute an important example, as they display n-type semiconductor behavior [1] and attracted great interest due to their optical, chemical, electrical, and physical properties that can be beneficial especially as sensors [2]. Based on this broad interest and high sensing potential, we present in this paper detailed characterization of photodiodes that contain CdFe2O4 thin films
The optical and electrical properties of thin films of nanomaterials are tunable by changing the particulate size, surface chemistry, and shape or aggregation state, providing utility for different applications
Summary
Researchers have gone to significant lengths to prepare and utilize novel semiconductor metal oxides in new device configurations To this trend, the CdO-based films constitute an important example, as they display n-type semiconductor behavior [1] and attracted great interest due to their optical, chemical, electrical, and physical properties that can be beneficial especially as sensors [2]. The optical and electrical properties of thin films of nanomaterials are tunable by changing the particulate size, surface chemistry, and shape or aggregation state, providing utility for different applications Such wide range of tuning parameters helps designers in many advanced applications [2] such as solar cell, gas sensors, and optoelectronic devices [3,4,5,6,7,8,9]. Do we explore a unique metal oxide thin film and its doping behavior, but we provide practical device data in terms of a major optoelectronic application
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