Abstract
The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.
Highlights
During the last few decades, silicon carbide (SiC) has gained significant importance in a wide range of power electronics applications
This section is divided into four subsections: temperature dependent investigated. The current-voltage (I-V), C-V characteristics, discussion of the I-V, C-V results, and the activation energy plot are discussed based on the electronic transport and barrier inhomogeneities for p-type 4H-SiC based Al-Foil contact Schottky barrier diode (SBD)
Al has been extensively used as a metal contact and interconnects in semiconductor devices, especially for Schottky contacts because it has a low Schottky barrier height (SBH) and low resistivity which results in Forward current
Summary
During the last few decades, SiC (a wide bandgap semiconductor material) has gained significant importance in a wide range of power electronics applications. SiC exists in many different crystalline forms, which are called polytypes. Among these polytypes, 4H-SiC, 6H-SiC and 3C-SiC are attractive for the development of power electronics devices thanks to their distinct physical and electrical attributes. 4H-SiC is a potential candidate for high-power device applications due to its low-loss, low series resistance, stability at high-temperature, high electron velocity and its extraordinary high thermal conductivity and high physical and chemical stability, high breakdown voltage properties [1,2,3,4]. As a result of these properties, 4H-SiC-based power Schottky barrier diodes and modules are already commercially available. Temperature dependency for n-type SiC-based devices has been investigated by many researchers [5,6,7] to commercialize the expected applications
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