Abstract
A series of amorphous silicon (a-Si) films have been deposited by dc sputtering. We have found a new preparation parameter, namely, the pumping speed of the secondary vacuum pump which has a considerable influence on the electronic properties of the material. Samples deposited under a reduced pumping speed possess electrical properties which are extremely sensitive to the presence of hydrogen. Conductivity and photoconductivity may increase over several orders of magnitude with the addition of a relatively small amount of hydrogen.
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