Abstract
Copper nickel oxide (CuNiO2) thin films were deposited onto unheated glass substrates by DC reactive magnetron sputtering the composite target of Cu50Ni50 at a fixed oxygen partial pressure of 3x10-4 mbar and sputter pressure of 3x10-2 mbar. The as-deposited copper nickel oxide films were annealed in air at temperatures in the range 200-300°C for one hour. The as-deposited and annealed films were characterized for their chemical composition, structure, electrical and optical properties. The as-deposited films were amorphous in nature. The films annealed in air at 250°C and above were polycrystalline CuNiO2. The electrical resistivity of the films increased with annealing temperature due to the filling of oxygen ion vacancies. The films annealed at 300°C exhibited the crystallite size of 65 nm, electrical resistivity of 65 Ωcm and optical band gap of 2.06 eV.
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