Abstract
The effect of annealing temperature on the electrochromic properties of the tantalum oxide (TaO) thin films deposited on silicon wafer (100) and indium tin oxide (ITO) substrates by dc reactive magnetron sputtering was investigated. The films were annealed at 300, 400 and 500 °C in vacuum for 2 hour. The crystalline structure, morphology, optical properties and electrochromic properties of as-deposited and annealed film were deduced by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry and ultraviolet–visible (UV–vis) spectrophotometery, respectively. The reflective index of TaO thin films increased with increasing annealing temperature. The result indicated that the annealed TaO thin film showed better performance than the as-deposited film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
