Abstract
Tantalum oxide (TaO) thin films were deposited by dc reactive magnetron sputtering at room temperature. A target of tantalum (99.995%) and a mixture of argon and oxygen gases were used to deposit TaO films on to silicon wafers (100) and BK7 glass substrate. The effects of annealing temperature (300–700 °C) on structural, morphology and anti-bacterial properties were investigated. Grazing incident X-ray diffraction (GIXRD), atomic force microscope (AFM) measurements are carried out to identify the crystalline structure, film morphology and surface roughness, respectively. The antibacterial behavior of the tantalum oxide thin films will be discussed in this paper.
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