Abstract
Modulating the ferroelectric properties of P(VDF-TrFE) polymers both electrically and optically could open up new opportunities for their applications in non-volatile memories and sensors. Here by using the Nb:SrTiO3 semiconductor as electrode compared with metal Au electrode, we report on the modulation of ferroelectric properties of P(VDF-TrFE) thin film capacitors both by electric field and UV light. A ferroelectric hysteresis loop shift together with the asymmetric switching behavior has been observed when using semiconducting electrode, which could be explained by the band alignment model based on interfacial charge screening. On the basis of band bending near the ferroelectric/semiconductor interface, we could further modulate the ferroelectric switching behaviors reversibly by UV light illumination. Our research provides a new route to engineer the ferroelectric properties of P(VDF-TrFE) polymer thin film capacitors, promising their applications in optoelectronic devices.
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