Abstract
A novel structure of a three-terminal a-Si:H(p+-i-n)/c-Si(p-n) heterojunction threshold switching device is developed. The device can be controlled both by a voltage-controlled mode and a current-injection mode. The voltage control gain and current triggering capability are 0.9 and 5×10-3 V/µA, respectively. When this switching device is operated as an optical switch, the light triggering sensitivity is 5.8×10-3 V/µW.
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