Abstract
Multilayer structures of AlxIn1-xAsySb1-y/GaSb(0.37⩽x⩽0.43,0.50⩽y⩽0.52),grown by molecular beam epitaxy on GaSb(100) substrates,have been characterized using variable-temperature Hall and Shubnikov-de Haas (SdH) techniques. Fornominally undoped structures both p- and n-type conductivity wasobserved. The mobilities obtained were lower than thosepredicted by an interpolation method using the binary alloysand, therefore, a detailed analysis of mobility versustemperature data was performed to extract the appropriatescattering mechanisms. For p-type samples, the dominantmechanism was ionized impurity scattering at low temperatures(T<70 K) and polar optical phonon at higher temperatures(T>90 K). For n-type, ionized impurity scattering waspredominant at low temperatures (T<70 K), and electron-holescattering dominated for both the intermediate- and high-temperature range (T>100 K). SdH measurementswere made on the higher-mobility samples. Analyses of theSdH data indicate the presence of two-dimensional carrierconfinement consistent with energy subbands in shallowGaAszSb1-z potential wells.
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