Abstract
Shubnikov-de Haas (SdH) measurements were performed on a 200 Å layer of pseudomorphic In 0.10Ga 0.90As grown by molecular beam epitaxy on undoped GaAs with an overlayer of Al 0.15Ga 0.85As. The AlGaAs consists of a spacer and a heavily doped layer. Measurements were taken in magnetic fields up to 1.4 tesla in the temperature range 1.4K < T < 10K. Analysis of the SdH data indicated that only one sub-band was populated with a density of 5.8×10 11cm −2 and an effective mass at the Fermi level m ★= (0.060 ± .001)m 0. No magnetic field dependence of m ★ was observed. Hall effect measurements in this temperature range gave a Hall mobility μ H = 9.1×10 4 cm 2/Vs. The transport scattering time (derived from μ H) μ H =3. 1ps and the ratio is intermediate between the μ SdH =0.55ps yielded a ratio μ H μ SdH ∼6 . This ratio, and the two separate ratio of approximately unity found in Si MOSFETs and values of order 10–40 found in AlGaAs GaAs heterostructures. The ratio, and the two separate characteristic times observed in our sample, can be explained in terms of the dominance of alloy and ionized impurity scattering at low temperatures.
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