Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

Abstract

The electrical and transport properties of rare-earth Y2O3 on n-type GaN with Au electrode have been investigated by current–voltage and capacitance–voltage techniques at room temperature. The Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode shows a good rectification behavior compared to the Au/n-GaN metal–semiconductor (MS) diode. Statistical analysis showed that a mean barrier height (BH) and ideality factor are 0.78 eV and 1.93, and 0.96 eV and 2.09 for the Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes, respectively. Results indicate that the high BH is obtained for the MIS diode compared to the MS diode. The BH, ideality factor and series resistance are also estimated by Cheung’s function and Norde method. From the forward current–voltage data, the interface state density (N SS) is estimated for both the MS and MIS Schottky diodes, and found that the estimated N SS is lower for the MIS diode compared to the MS diode. The results reveal that the introduction of Y2O3 interlayer facilitated the reduction of N SS of the Au/n-GaN interface. Experimental results suggest that the Poole–Frenkel emission is a dominant conduction mechanism in the reverse bias region of both Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes.