Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO 2/n-GaN metal–insulator–semiconductor structures

Abstract

In the present work, we have investigated the current–voltage ( I– V) and capacitance–voltage ( C– V) characteristics of Au/SiO 2/n-GaN metal–insulator–semiconductor (MIS) Schottky diode and compared with Au/n-GaN metal–semiconductor (MS) Schottky diode. Calculations showed that the Schottky barrier height and ideality factor of the MS Schottky diode is 0.79 eV ( I– V), 0.87 eV ( C– V) and 1.45, respectively. It is observed that the Schottky barrier height increases to 0.86 eV ( I– V), 0.99 eV ( C– V) and ideality factor deceases to 1.3 for MIS diode. For the MS diode, the calculated doping concentration is 4.17 × 10 17 cm −3. However, in the case of the MIS Schottky diode, the decrease in doping concentration is observed and the respective value is 2.08 × 10 17 cm −3. The obtained carrier concentration of the MIS diode is reduced about 50% when compared to the MS diode. The interface state density as determined by Terman's method is found to be 3.79 × 10 12 and 3.41 × 10 10 cm −2 eV −1 for the MS and MIS Schottky diodes, respectively. The calculated interface densities are 2.47 × 10 11 cm −2 eV −1, 3.35 × 10 11 cm −2 eV −1 and 3.5 × 10 11 cm −2 eV −1 for the sweep rates of 300, 450 and 600 mV/s from MOS C– V measurements for the MIS Schottky diode. The interface state density calculated from Terman's method is found to be increased with sweep rate. From the C– V measurement, it is noted that the decrease in the carrier concentration in MIS diodes as compared to MS diode may be due to the presence of oxide interfacial layer. DLTS measurements have also been performed on MIS Schottky diode and discussed.