Abstract
The Zinc Oxide (ZnO) thin film deposited on n-type silicon (Si) by radio frequency magnetron sputtering at room temperature. During the Radio Frequency (RF) power, argon/oxygen gas pressure at different Standard Cubic Centimeters per Minute (SCCM), substrate temperature was varied, optimized for crystal structure, surface morphology, roughness, and optical electrical studies. The deposited films were examined crystalline structures and investigated by X-Ray Diffraction (XRD), surface morphology by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM), optical studies by UV-Vis, electrical studies by IV characteristic. The film post deposition annealed was improving the quality of the film properties
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