Abstract
The electric filed-induced multi-jump magnetic switching based on multiferroic heterostructure is studied using micromagnetic simulation software. The model consists of CoFe2O4 thin film with magnetocrystalline anisotropy and PZN-PT substrate. The magnetic field is applied in plane along different directions with the electric field (E) applied through the thickness of substrate varying from 0 to 2.0 MV/m. The results reveal that the strain produced by the substrate induces an in-plane uniaxial anisotropy. The effective anisotropy of film changes from fourfold to twofold symmetry under E. When magnetic field is along specific directions, the multi-jump magnetic switching process can be induced by electric fields. Typically, when the angle between magnetic field and [100] direction is 75°, and E = 2.0 MV/m, the switching process from one to two or three jump can be observed when E increases from 0 to 2.0 MV/m. This appearance of multi-jump switching is attributed to the abrupt variation of the magnetization direction for the minimum energy density induced by the electric field.
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