Abstract
The fatigue properties of the sol–gel derived Pb0.99[(Zr0.6Sn0.4)1−XTiX]0.98Nb0.02O3 (40/100X/2) thin films deposited on platinized silicon substrates were investigated as a function of Ti content (0.03⩽X⩽0.15). With an increase of Ti content X, the antiferroelectric phase was transformed to the ferroelectric phase and the degradation of polarization under the repetitive switching was increased. This behavior should be closely related to the fact that the antiferroelectric phase contains mainly 180° domains, which have smaller internal stresses during switching than those of 90° domains. The difference of nanoscale domain structure between the antiferroelectric and ferroelectric thin films was confirmed by scanning force microscopy.
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