Elastic modulus of amorphous SiO2 nanowires

Abstract

Amorphous SiO2 nanowires with diameter ranging from 50 to 100 nm were synthesized using chemical vapor deposition (CVD) under an argon atmosphere at atmospheric pressure. Nanoscale three-point bending tests were performed directly on individual amorphous SiO2 nanowires using an atomic force microscope (AFM). Elastic modulus of the amorphous SiO2 nanowires was measured to be 76.6±7.2GPa, which is close to the reported value of the bulk SiO2 and thermally grown SiO2 thin films, but lower than that of plasma-enhanced CVD SiO2 thin films. The amorphous SiO2 nanowires exhibit brittle fracture failure in bending.