Abstract
By method of the pulsed laser deposition of Ni/C bilayer precursor films and annealing in N2, ambient amorphous SiO2 nanowires were prepared on fused quartz substrates. Field emission scanning electron microscopy images reveal that after annealing at the temperature of 1200°C for 1 h, the Ni/C films turn into dense nanowires with lengths and widths of several micrometers and tens of nanometers, respectively. Results of transmission electron microscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy fitted on it show that the nanowires are amorphous SiO2 nanowires and that they are grown in the Ni-leading solid-liquid-solid mechanism. Besides, C particles can promote SiO2 nanowires to grow longer in the forms of carbon and carbon monoxide.
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