Abstract
An Ehrenfest derivation for the forces within semiconductors of inhomogeneous material composition is provided. An illustrative 1-D analysis, under the extended Wannier-Slater approximation, is presented. Only two types of force are found to exist: one from charges constituting the semiconductor lattice, and the other from global inhomogeneities in free-carrier and ionized-impurity charge throughout the semiconductor. The so-called “entropy force” does not arise from our Ehrenfest analysis.
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