Efficientenergy‐conservativedispersive transistor modelling usingdiscrete‐timeconvolution and artificial neural networks

Abstract

AbstractThis paper describes an efficient simulation technique for field‐effect transistor devices exhibiting significant frequency dispersive behavior. The device model is formulated such that a single energy function completely describes the channel displacement current, thus imposing charge and energy conservations principles from the outset. It is shown that adherence to energy conservation necessarily implies a reciprocal intrinsic displacement network, which is typically too rigid to follow measured device data. This problem is overcome by considering a frequency dispersive time‐delay parameter, which has the effect of allowing nonreciprocal susceptance behavior to be captured by the overall device model. This dispersive time‐delay parameter is included within the nonlinear device simulation via an efficient discrete‐time convolution.