Abstract
This paper introduces a simple and accurate approach to extracting an energy and charge conservative model for the displacement current in a field-effect transistor (FET). Through careful fitting of the device transconductance time-delay parameter, a symmetric capacitance matrix is obtained that may be used directly to extract a single energy function in the form of an artificial neural network (ANN). Results show excellent capacitance fits across the full bias plane along with high-fidelity S-parameter fits at multiple bias points.
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