Abstract
We investigated the effects of thin film interference during sub-millisecond annealing on junction activation and recrystallization using ultra-thin-body silicon-on-insulator (UTB-SOI) wafers. We showed that, in the wavelength range used by broadband heating sources in flash lamp annealing (FLA), thin film interference in the body Si and buried oxide layers of UTB-SOI wafers can change the light absorption. This in turn reduces the duration of the heat distribution, resulting in insufficient activation of junctions during sub-millisecond annealing. Further, we showed that laser spike annealing (LSA) can achieve full activation of junctions even in UTB-SOI wafers because using light waves in the far-infrared wavelength region can minimize thin film interference.
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