Abstract
We report on the effects of thermal annealing on the electrical properties of tetraethylorthosilicate (TEOS)-deposited ultra-thin nitrided oxide using nitric oxide. Ultra-thin oxynitride films have been deposited on strained Si0.82Ge0.18 layers at a low temperature by microwave plasma-enhanced chemical vapour deposition. The interface trap charge density (Dit), fixed oxide charge density (Qf/q), flatband voltage (VFB) and border trap charge (Qbt) are found to decrease with annealing up to a temperature of 800 °C. Under Fowler–Nordheim (F–N) constant current stressing, the oxynitride films show an improvement in the charge trapping behaviour after annealing. The reliability characteristics have been studied using charge-to-breakdown (QBD) measurements.
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