Abstract
Ultra thin (∼6–7nm) silicon-oxynitride films have been deposited on Strained-Si/Si 0.8 Ge 0.2 layers at high temperature of 900°C and 1000°C using rapid thermal nitridation in O 2 +N 2 ambient. The border trap (Q bt ) generation using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed. It has been observed that the interface trap charge density (Dit) and hysteresis decrease in 1000°C RTN. It is also observed that the charge trapping behavior and the amount of border trap charge density are found to be low in the case of 1000°C RTN process.
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