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Abstract
Silicon dioxide and oxynitride films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature using tetraethylorthosilicate (TEOS), TEOS/O2 and TEOS/NO plasma. Effect of post-oxidation annealing (POA) time (at 700 °C) on theelectrical properties of the dielectrics have been studied. The border trap (Qbt) generation has been characterized usingthe hysteresis in high-frequency capacitance-voltage (C-V) characteristics.It has been observed that the interface trap charge density (Dit) and gate voltage shift (ΔVG) decrease with POA time. Under Fowler-Nordheim constant current stressing, the charge trapping behaviour and the amount of border trap charge density are found to be low in the case of TEOS/NO-plasma-deposited oxynitride films compared with TEOS- and TEOS/O2-plasma-deposited oxide films.
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