Abstract
The optimum structure of the p+emitter for the n-type silicon solar cell was determined with the simulation of the boron doping concentration. The boron concentration (NB) in the p+emitter was varied in the range of1×1017and2×1022 atoms/cm3while maintaining the base doping concentration at2×1016 atoms/cm3. With the increase of the boron concentration, the open circuit voltage (VOC) of the cell increased up to 0.525 V and then was nearly saturated atNB>5×1018 atoms/cm3. On the other hand, the short circuit current density (JSC) began to decrease atNB>1×1019 atoms/cm3due to the increase of the surface recombination loss, and without considering the variation of the contact resistance along the emitter doping level, the maximum efficiency of the cell was obtained at aroundNB=5×1018 atoms/cm3. While the contact resistance of the electrode decreases with the increase of the doping concentration in the p+emitter, and with consideration of the variation of the contact resistance, the optimum value ofNBfor maximum efficiency shifted to the higher doping level.
Highlights
The p-type silicon solar cell comprises a large portion of the industrial solar cells
It was observed that, considering the contact resistance, the optimum doping concentration of boron for the n-type crystalline silicon solar cell was in the range of 1 × 1019–1 × 1020 atoms/cm3
In order to discover the optimized p+ emitter for the n-type crystalline silicon solar cell, the boron-doped emitter was formed by the simulation method
Summary
The p-type silicon solar cell comprises a large portion of the industrial solar cells. The n-type wafer has a longer diffusion length than the p-type wafer as a result of a higher tolerance to common transition metal impurities [2, 3] It does not contain any boron-oxide pairs, which are considered as the origin of light-induced degradation (LID) in the p-type Si wafer [4]. In order to realize a p+ emitter on n-type silicon wafer, three kinds of methods are usually applied: (i) boron-diffused emitter, (ii) Al-alloyed emitter, and (iii) heterojunction using p-type a-Si [5]. Among these methods, the boron-diffused emitter is most similar to the phosphorus-diffused emitter of the conventional p+ silicon solar cell. The contact resistance (RC) of the electrode and the doping concentration of boron
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