Abstract
This research paper present efforts to enhance the performance of amorphous silicon p-i-n type solar cell using sidewall passivation. For sidewall passivation, MEMS insulation material Al2O3 was used. The main objective of this paper is to observe the effect of sidewall passivation in amorphous silicon solar cell and increase the conversion efficiency of the solar cell. Passivation of Al2O3 is found effective to subdue reverse leakage. It increases the electric potential generated in the designed solar cell. It also increases the current density generated in the solar cell by suppressing the leakage. Enhancement in J-V curve was observed after adding sidewall passivation. The short circuit current density (Jsc) increased from 14.7 mA/cm2 to 18.5 mA/cm2, open circuit voltage (Voc) improved from 0.87 V to 0.89 V, and the fill factor also slightly increased. Due to the sidewall of passivation of Al2O3, conversion efficiency of amorphous silicon solar cell increased by 29.07%. At the end, this research was a success to improve the efficiency of the amorphous silicon solar cell by adding sidewall passivation.
Highlights
The greater part of the world's recent electricity supply is generated from fossil fuels like oil, coal and natural gas
Conversion efficiency of designed amorphous silicon (a-Si) solar cell has been increased by 29.07% after adding sidewall passivation of Al2O3
Applications of amorphous silicon based solar cell will increase if the conversion efficiency is increased significantly
Summary
The greater part of the world's recent electricity supply is generated from fossil fuels like oil, coal and natural gas. Dielectric films are normally used to achieve such reduction These provide an efficient passivation of surface recombination and an effective anti-reflection layer. The conditions that produce an effective anti-reflection coating are not necessarily the same for efficient passivation, both functions are difficult to achieve simultaneously and expensive processing steps are normally required. This can be overcome by enhancing the passivation properties of an anti-reflective film using the electric field effect. To produce electricity; the thin film solar cells make use of only a 1-4 μm thick layer of semiconductor substance. For this reason these require less processing and less materials.
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