Abstract
In this study, the influence of ambient temperature on the performance of p and n types of silicon solar cells have been investigated. The PC1D modeling software is used to simulate and analyze the photovoltaic properties of both types of silicon solar cells with the total thickness is restricted to $1\mu m$ and the ambient temperature is varied from 20 to 50°C. The simulation result exhibits the n type silicon solar cell give a better performance in term of short circuit current density compared to n type silicon solar cell. Apart from that, the conversion efficiency of silicon solar cells decrease linearly to ambient temperature due to higher recombination current. The efficiency of 5.58% is achieved for both types of silicon solar cells with ambient tempearture of 20°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
