Abstract
Lead lanthanum zirconate titanate [PLZT (9/65/35)] thin films were prepared by dip-coating on Si (100) or Si/Ti/Pt (100) substrates using a polymeric precursor solution and annealed at 650 °C for 3 h. Perovskite phase formation of the PLZT thin films and microstructure were analysed using XRD and SEM. Effects of Si (100), Si/Ti/Pt (100) substrates and atmosphere on crystallization of PLZT thin films were studied. Films deposited on platinum coated silicon (100) show a heterogeneous surface with presence of bubbles. Otherwise, the PLZT (9/65/35) thin films deposited on silicon (100) substrate shows a more uniform surface after annealing in oxygen atmosphere.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
