Abstract
AbstractPZT (52/48) and PLZT (7/65/35) thin films were prepared by chemical solution deposition (CSD) on Pt/SiO2/Si and Cu foil substrate, respectively. For PZT thin films on Pt/SiO2/Si substrates, pO2 control during thermal treatment affected both perovskite phase formation and orientation, but did not show significant impact on the ferroelectric and dielectric properties. When PLZT thin films (7/65/35) were prepared on Cu foil to tailor ferroelectric/dielectric properties, it was observed that ferroelectric and dielectric properties were significantly affected by the strains, possibly from the coefficient of thermal expansion (CTE) mismatch between PLZT and Cu foil during cooling after high temperature crystallization. It was also experimentally observed that, depending on the direction of applied strain, the PLZT films could be cycled between ferroelectric and paraelectric phases. It was suggested that PZT based thin films on base metal substrate requires very careful processing for optimized electrical performance.
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