Abstract
In this paper we simulate the effects of temperature in CNTFET- based design of analog circuits, enhancing a semi-empirical model of CNTFET, already proposed by us, in which the temperature variation in the drain current equation and in energy bandgap is considered in order to estimate the change in static and dynamic conditions. A short description of the model used to reproduce the I-V characteristics of the device, at different temperatures, is given. Then the effects of thermal variations in the design of a phase shift oscillator, a cascode current sink mirror and an operational trans-conductance amplifier, are illustrated and widely discussed.
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