Abstract
We report the effects of substrate temperature and O2/Ar ratios on the properties of ZrTiO4 thin films prepared by RF magnetron sputtering. The films were deposited at a constant gas pressure (0.133 Pa) with various substrate temperatures (25-450° C) and different O2/Ar ratios from 0/100 to 20/80. The deposition rate decreases with increasing oxygen partial pressure and substrate temperature. Moreover, the higher O2 content increases the surface roughness of deposited films, which reduces the transmittance of the films. The effects of substrate temperature and oxygen partial pressure on the stoichiometric composition, optical constant, crystallinity phase, surface morphology, and adhesion have also been systematically investigated.
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