Abstract
Zn0.85Mg0.15O thin films were deposited on quartz substrate by pulsed laser deposition at different oxygen partial pressures and substrate temperatures. XRD results revealed that deposited films were textured along c-axis and maintain wurtzite crystalline symmetry. Increase in grain size, optical band gap energy and emission intensity were noticed with an increase in oxygen partial pressure and substrate temperature up to 1mTorr and 500°C, respectively. Above these values, the grain size, band gap and emission intensity were decreased due to the segregation of oxygen and accumulation of defects at grain boundaries.
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